led - chip preliminary 10.04.2007 rev. 02/06 radiation infrared typ. dimensions (m) typ. thickness anode cathode maximum ratings tamb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward current (dc) i f 100 ma peak forward current t p 50 s, t p /t = 1/2 i fm 200 ma optical and electrical characteristics t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward voltage i f = 20 ma v f 1.05 1.3 v forward voltage i f = 100 ma v f 1.20 1.4 v reverse voltage i r = 100 a v r 5v radiant power 1 i f = 20 ma e 0.4 0.6 mw radiant power 1 i f = 100 ma e 2.0 2.8 mw radiant power 2 i f = 100 ma e 5.5 mw peak wavelength i f = 100 ma p 1040 1060 1080 nm spectral bandwidth at 50% i f = 100 ma ? 0.5 50 nm switching time i f = 100 ma t r , t f 10 ns 1 measured on bare chip on to-18 header with epigap equipment 2 measured on epoxy covered chip on to-18 header with epigap equipment labeling type e (typ) [mw] v f (typ) [v] el -1060-17 packing: chips on adhesive film with wire-bond side on to p 260 m gold alloy, 1.5 m gold alloy, 0.5 m quantity lot n type mqw ELC-1060-17 electrodes p (anode) up technology ingaas/inp 360 360 300 r 1 1 6 led-11 epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 1 of 1
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